作者: Jung Yup Yang , Ju Hyung Kim , Won Joon Choi , Young Ho Do , Chae Ok Kim
DOI: 10.1063/1.2347703
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摘要: We present experimental results for laser-induced Au nanoparticle (NP) embedded in a HfO2 high-k dielectric matrix. Cross-sectional transmission electron microscopy images showed that the NPs of 8nm diameter were clearly Capacitance-voltage measurements Pt∕HfO2∕AuNPs∕HfO2 on p-type Si substrate reliably exhibited metal-oxide-semiconductor behavior with large flatband shift 4.7V. In addition, charge retention time at room temperature was found to exceed 105h. This longer attributed higher barrier height via high work function NP.