Influence of bias heating on a titanium bolometer infrared sensor

摘要: A 128 by pixel bolometer infrared focal plane array using thin film titanium has been developed. The device is a monolithically integrated structure with detector located over CMOS circuit that reads out the bolometer's signals. Since thermal conductance of minimized, temperature itself increased applying bias current. Under present operating conditions bolometer, this increase becomes about 30 degrees Celsius. influence heating on destruction and degradation was experimentally investigated discussed. noise equivalent difference obtained 0.07 fabrication process silicon-process compatible, costs can be kept low.