The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation process—the annealing effect

摘要: The microstructural evolution of UNCD films which are P-ion implanted and annealed at 600 °C (or 800 °C) is systematically investigated. difference interaction that the content undergoes along trajectory incident P-ions reflected in alteration granular structure. In regions where reside, “interacting zone,” found about 300 nm beneath surface films, coalescence diamond grains occurs inducing nano-graphitic clusters. annealing heals defects and, some cases, forms interconnected graphitic filaments result decrease resistance. However, (800 induces marked UNCD-to-Si layers interaction. This due to processes hinders electron transport across interface degrades field emission properties films. These very well account for phenomenon elaborating that, spite enhanced conductivity film's implantation processes, these do not improve.