Nitrogen-related dopant and defect states in CVD diamond.
作者： E. Rohrer , C. F. O. Graeff , R. Janssen , C. E. Nebel , M. Stutzmann
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摘要: Subbandgap absorption of chemical-vapor-deposition diamond films, with nitrogen contents varying from 10 to 132 ppm has been explored by the constant-photoconductivity method (CPM), photothermal-deflection spectroscopy (PDS) and electron spin resonance (ESR). The spectra measured PDS increase monotonically are structureless increasing photon energies indicating due amorphous carbon graphite. CPM data show distinct features, bands at h\ensuremath{\nu}=1.6, 4.0, 4.7 eV in nominally undoped film, 2.4 nitrogen-rich layers respectively. doped films comparable photoconductivity synthetic Ib diamond. defect densities involved content. From ESR, a vacancy-related density (g=2.0028) is deduced. Paramagnetic (g=2.0024) can be detected high-quality CVD layer or illuminating samples larger than band gap. \textcopyright{} 1996 American Physical Society.
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sci-hub.se 参考文章(25)
B.V. Spitsyn, L.L. Bouilov, B.V. Derjaguin, Vapor growth of diamond on diamond and other surfaces Journal of Crystal Growth. ,vol. 52, pp. 219- 226 ,(1981) , 10.1016/0022-0248(81)90197-4
Seiichiro Matsumoto, Yoichiro Sato, Mutsukazu Kamo, Nobuo Setaka, Vapor Deposition of Diamond Particles from Methane Japanese Journal of Applied Physics. ,vol. 21, pp. L183- L185 ,(1982) , 10.1143/JJAP.21.L183
Atsuhito Sawabe, Tadao Inuzuka, Growth of diamond thin films by electron-assisted chemical vapour deposition and their characterization Thin Solid Films. ,vol. 137, pp. 89- 99 ,(1986) , 10.1016/0040-6090(86)90197-5
Alfred B. Anderson, S. P. Mehandru, n-type dopants and conduction-band electrons in diamond: Cluster molecular-orbital theory. Physical Review B. ,vol. 48, pp. 4423- 4427 ,(1993) , 10.1103/PHYSREVB.48.4423
S.A. Kajihara, A. Antonelli, J. Bernholc, Impurity incorporation and doping of diamond Physica B: Condensed Matter. ,vol. 185, pp. 144- 149 ,(1993) , 10.1016/0921-4526(93)90228-X
H. G. Grimmeiss, L‐Å. Ledebo, Spectral distribution of photoionization cross sections by photoconductivity measurements Journal of Applied Physics. ,vol. 46, pp. 2155- 2162 ,(1975) , 10.1063/1.321858
M Vaněček, A Abraham, O Štika, J Stuchlik, J Kočka, None, Gap states density in a-Si:H deduced from subgap optical absorption measurement on Schottky solar cells Physica Status Solidi (a). ,vol. 83, pp. 617- 623 ,(1984) , 10.1002/PSSA.2210830225
W. B. Jackson, N. M. Amer, A. C. Boccara, D. Fournier, PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION Applied Optics. ,vol. 20, pp. 1333- 1344 ,(1981) , 10.1364/AO.20.001333
K. Okumura, J. Mort, M. A. Machonkin, The nature of extrinsic photoconductivity in diamond thin films Philosophical Magazine Letters. ,vol. 65, pp. 105- 112 ,(1992) , 10.1080/09500839208207522
M. C. Hicks, C. R. Wronski, S. A. Grot, G. Sh. Gildenblat, A. R. Badzian, T. Badzian, R. Messier, The barrier height of Schottky diodes with a chemical‐vapor‐deposited diamond base Journal of Applied Physics. ,vol. 65, pp. 2139- 2141 ,(1989) , 10.1063/1.342864