作者: Kewei Yang , Andreas G. Andreou
DOI: 10.1007/BF01238888
关键词: Gate driver 、 Direct-coupled amplifier 、 Charge amplifier 、 Fully differential amplifier 、 Electronic engineering 、 Current-feedback operational amplifier 、 Input offset voltage 、 Mathematics 、 Electrical engineering 、 Operational transconductance amplifier 、 Operational amplifier
摘要: The loseless property of an MOS floating gate is exploited to implement exact summing operations in the charge domain. Loseless sharing such structures yields circuits with potential applications as building blocks for analog signal processing. Large well small models floating-gate transistors are presented both above-threshold and subthreshold regions. Experimental data from fabricated devices a 2 micron double poly, n-well process good agreement models. A canonical structure, Multiple Input Floating-gate Differential Amplifier proposed its use different circuit configurations demonstrated. multiple differential input operational amplifier presented. Limitations also discussed.