Adaptive circuits using pFET floating-gate devices
作者： P. Hasler , B.A. Minch , C. Diorio
DOI: 10.1109/ARVLSI.1999.756050
关键词: Electronic circuit 、 Amplifier 、 Operating point 、 Hot-carrier injection 、 Adaptive system 、 EPROM 、 Electronic engineering 、 Electrical engineering 、 Engineering 、 Electrical element 、 CMOS
摘要: … We add floating-gate charge by electron tunneling, and we remove floatinggate charge by hot-electron injection. With this floating-gate technology, we can not only build analog …
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