Fowler‐Nordheim Tunneling into Thermally Grown SiO2
作者： M. Lenzlinger , E. H. Snow
DOI: 10.1063/1.1657043
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摘要: Electronic conduction in thermally grown SiO2 has been shown to be limited by Fowler‐Nordheim emission, i.e., tunneling of electrons from the vicinity electrode Fermi level through forbidden energy gap into band oxide. characteristics have observed over more than five decades current for emission Si, Al, and Mg. If previously measured values barrier heights are used, slopes (log J/E2 vs 1/E) imply relative effective mass about 0.4. These take account corrections image‐force lowering temperature effects. The absolute currents lower a factor ten theoretically expected values, probably due trapping dependence was found follow theoretical curve 80°–420°K. However, an inconsistent 0.95 had assumed....
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