The electrical characterization of tantalum capacitors as MIS devices
作者： Brian Holman
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参考文章(29)
Donald Neamen, Semiconductor Physics and Devices ,(1991)
H. Miki, M. Kunitomo, R. Furukawa, T. Tamaru, H. Goto, S. Iijima, Y. Ohji, H. Yamamoto, J. Kuroda, T. Kisu, I. Asano, Leakage-current mechanism of a tantalum-pentoxide capacitor on rugged Si with a CVD-TiN plate electrode for high-density DRAMs symposium on vlsi technology. pp. 99- 100 ,(1999) , 10.1109/VLSIT.1999.799359
T. Remmel, R. Ramprasad, J. Walls, Leakage behavior and reliability assessment of tantalum oxide dielectric MIM capacitors international reliability physics symposium. pp. 277- 281 ,(2003) , 10.1109/RELPHY.2003.1197757
K. Wakino, Y. Tsujimoto, K. Morimoto, N. Ushio, Technological progress in materials application for electronic capacitors in Japan IEEE Electrical Insulation Magazine. ,vol. 6, pp. 29- 43 ,(1990) , 10.1109/57.55288
P N Murgatroyd, Theory of space-charge-limited current enhanced by Frenkel effect Journal of Physics D. ,vol. 3, pp. 151- 156 ,(1970) , 10.1088/0022-3727/3/2/308
P Vasina, T Zednicek, J Sikula, J Pavelka, Failure modes of tantalum capacitors made by different technologies Microelectronics Reliability. ,vol. 42, pp. 849- 854 ,(2002) , 10.1016/S0026-2714(02)00034-3
M. Lenzlinger, E. H. Snow, Fowler‐Nordheim Tunneling into Thermally Grown SiO2 Journal of Applied Physics. ,vol. 40, pp. 278- 283 ,(1969) , 10.1063/1.1657043
W.R. Harrell, C. Gopalakrishnan, Implications of advanced modeling on the observation of Poole–Frenkel effect saturation Thin Solid Films. ,vol. 405, pp. 205- 217 ,(2002) , 10.1016/S0040-6090(01)01752-7
W. Shockley, R. C. Prim, Space-Charge Limited Emission in Semiconductors Physical Review. ,vol. 90, pp. 753- 758 ,(1953) , 10.1103/PHYSREV.90.753
E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer, Electrical properties in low temperature range (5 K-300 K) of tantalum oxide dielectric MIM capacitors Microelectronics Reliability. ,vol. 45, pp. 925- 928 ,(2005) , 10.1016/J.MICROREL.2004.11.024