Integrated circuit dielectric and method
作者： Jiong-Ping Lu , Changming Jin
DOI:
关键词: Electronic engineering 、 Integrated circuit 、 Porosity 、 Adhesion 、 Dielectric 、 Layer (electronics) 、 Composite material 、 Open surface 、 Gap filling 、 Materials science
摘要: A surface treatment for porous silica to enhance adhesion of overlying layers. Treatments include group substitution, pore collapse, and gap filling layer (520) which invades open pores (514) xerogel (510).
google.as 参考文章(21)
Masayoshi Yano, Kohei Mochizuki, Three-dimensional quadrupole mass spectrometer ,(1996)
Robert H. Havemann, Shin-puu Jeng, Multilevel interconnect structure with air gaps formed between metal leads ,(1994)
Douglas A. Loy, Kenneth J. Shea, Molecular engineering of porous silica using aryl templates ,(1992)
Charles Jeffrey Brinker, Narayan K. Raman, Molecular sieving silica membrane fabrication process ,(1996)
Richard Anthony Dipietro, John Patrick Hummel, Robert Dennis Miller, James Lupton Hedrick, Do Yeung Yoon, Hyuk-Jin Cha, Kenneth Raymond Carter, Hugh Ralph Brown, Integrated circuit device and process for its manufacture ,(1997)
Steven L. Koontz, Porous article with surface functionality and method for preparing same ,(1997)
Jon Fredrick Nebo, Roger Yu-Kwan Leung, Stephen Thomas Gonczy, Silicon oxycarbonitride by pyrolysis of polycyclosiloxanes in ammonia Composites Part A. ,vol. 1, pp. 86- 87 ,(1992)
Bruce E. Gnade, Teresa Ramos, Richard A. Stoltz, Shin-puu Jeng, Douglas M. Smith, Alok Maskara, Gregory P. Johnston, William C. Ackerman, Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates ,(2002)
Bruce E. Gnade, Chih-Chen Cho, Douglas M. Smith, Method of making a semiconductor device using a low dielectric constant material ,(1994)
Bruce E. Gnade, Chih-Chen Cho, Douglas M. Smith, Porous dielectric material with improved pore surface properties for electronics applications ,(1995)