Theory of hydrogen in GaN
作者： Jörg Neugebauer , Chris G. Van De Walle
DOI: 10.1016/S0080-8784(08)62713-1
关键词: Atomic physics 、 Crystallography 、 Acceptor 、 Band gap 、 Epitaxy 、 Semiconductor 、 Chemistry 、 Gallium 、 Vacancy defect 、 Hydrogen 、 Magnesium
摘要: This chapter discusses the theory of hydrogen in gallium nitrite (GaN). The most commonly used acceptor is magnesium (Mg) and consequently, investigations have focused on interaction with Mg. atomic geometry (AB N site) found for Mg–H complex GaN very different from well-established structure acceptor–H complexes other semiconductors where a BC configuration preferred. For (Ga) vacancy, it was that one, two, three, or four atoms can be accommodated levels are removed bandgap as more hydrogens attached. isolated Ga vacancy triple acceptor; 3– charge state, triply degenerate defect level about 1 eV above valence band fully occupied. To identify role achieving p -type GaN, analyzes case absent, corresponding to molecular-beam epitaxy (MBE) growth.
mpg.de
elsevier.com
sci-hub.se 参考文章(43)
Gyu‐Chul Yi, Bruce W. Wessels, Compensation of n‐type GaN Applied Physics Letters. ,vol. 69, pp. 3028- 3030 ,(1996) , 10.1063/1.116828
Jörg Neugebauer, Chris G. Van de Walle, Gallium vacancies and the yellow luminescence in GaN Applied Physics Letters. ,vol. 69, pp. 503- 505 ,(1996) , 10.1063/1.117767
P. Bogusl/awski, E. L. Briggs, J. Bernholc, Native defects in gallium nitride Physical Review B. ,vol. 51, pp. 17255- 17258 ,(1995) , 10.1103/PHYSREVB.51.17255
H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, M. Burns, Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies Journal of Applied Physics. ,vol. 76, pp. 1363- 1398 ,(1994) , 10.1063/1.358463
D. B. Laks, C. G. Van de Walle, G. F. Neumark, S. T. Pantelides, Role of native defects in wide-band-gap semiconductors Physical Review Letters. ,vol. 66, pp. 648- 651 ,(1991) , 10.1103/PHYSREVLETT.66.648
W. Götz, N. M. Johnson, J. Walker, D. P. Bour, H. Amano, I. Akasaki, Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 67, pp. 2666- 2668 ,(1995) , 10.1063/1.114330
O. Ambacher, R. Dimitrov, D. Lentz, T. Metzger, W. Rieger, M. Stutzmann, Growth of GaN/AlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium Journal of Crystal Growth. ,vol. 170, pp. 335- 339 ,(1997) , 10.1016/S0022-0248(96)00623-9
Chris G. Van de Walle, INTERACTIONS OF HYDROGEN WITH NATIVE DEFECTS IN GAN Physical Review B. ,vol. 56, ,(1997) , 10.1103/PHYSREVB.56.R10020
W. Götz, N. M. Johnson, J. Walker, D. P. Bour, R. A. Street, Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 68, pp. 667- 669 ,(1996) , 10.1063/1.116503
James A. Van Vechten, J. David Zook, Robert D. Horning, Barbara Goldenberg, Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation Japanese Journal of Applied Physics. ,vol. 31, pp. 3662- 3663 ,(1992) , 10.1143/JJAP.31.3662