作者: V. Berger , O. Gauthier-Lafaye , E. Costard
DOI: 10.1049/EL:19970230
关键词: Yablonovite 、 Electron-beam lithography 、 Optoelectronics 、 Materials science 、 Lithography 、 Photolithography 、 Optics 、 Photoresist 、 Photonic crystal 、 Gallium arsenide 、 X-ray lithography
摘要: The authors present the realisation of a 2D photonic bandgap in gallium arsenide, with holographic lithography technique. crystal consists circular etched air holes on triangular lattice, and has been obtained recording only three plane waves photoresist. quality final structure shows that lithography, which is low cost method compared electron beam high potential for microstructure fabrication.