Interface Evolution of Au-Au Thermocompression Bonding and Nanotwins
作者： Brett Beekley
DOI:
关键词: Composite material 、 Thermocompression bonding 、 Crystallography 、 Void (astronomy) 、 Silicon 、 Transmission electron microscopy 、 Electron diffraction 、 Scanning electron microscope 、 Stacking 、 Materials science 、 Wafer bonding
摘要: Thermocompression bonded gold-gold (Au-Au) interfaces were investigated using electron microscopy to study the micro- and nanostructure post-bonding. Analysis of scanning (SEM) images Au-Au at different bonding temperatures, ranging from 150 °C 250 °C, produced a relationship between size, shape distribution interfacial voids quality bond. The lowest temperature, had highest linear area fraction voids, as measured cross-sectional plan-view SEM images, respectively. devices hermetic test yield void fractions temperatures measured. Cross sectional in sample show that appear exist triple boundary interface two grains on one side interface. Transmission (TEM) was used investigate growth thermocompression where Au layers is nanotwinned (ntAu). During bonding, ntAu shown partially “detwin”, resulting large grain extends across interface, which may be indicative high bonds. TEM identified non-nanotwinned layer either did or not extend diffraction determine orientation each grain. (111) planes oriented within 17° plane grew while those with larger angles not. There no correlation cross-interfacial (100) plane. Additionally, gallium arsenide (GaAs) nanostubs deposited silicon (Si) production stacking faults, including nanotwins, (590 605 620 °C) its possible role strain relaxation process latticed-mismatched GaAs-Si All imaged showed faults sample. This also only temperature produce nanotwins. GaAs fast Fourier transform (FFT) lattice found leading potential and/or nanotwins relaxation.
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