作者: C.J. Meechan , R.R. Eggleston
DOI: 10.1016/0001-6160(54)90115-7
关键词: Crystallography 、 Melting point 、 Analytical chemistry 、 Electrical resistance and conductance 、 Metal 、 Electrical resistivity and conductivity 、 Materials science 、 Vacancy defect 、 Thermodynamic equilibrium 、 Activation energy 、 Copper 、 General Engineering
摘要: Abstract The electrical resistance of pure copper and gold has been measured as a function temperature from room to 950°C. experimental data taken below 500°C for each metal were fitted by an expression the form R = A + BT CT2. This equation data, within error, up 600°C gold. At higher temperatures values exceeded extrapolated quadratic function. additional resistance, ΔR, attributed presence vacancies existing in thermodynamic equilibrium at high temperatures. It was found plotting log ΔR vs 1 T that dependence on can be represented following : exp ( −E kT ) . Here E is presumed formation energy vacancies. determined this manner are 0.90 ± .05 ev 0.67 .07 ev, respectively. activation self-diffusion face-centered cubic metals should sum migration particular metal. From known energies given above, 1.17 1.54 obtained gold, Using theoretical resistivity per atomic cent vacancies, paper, vacancy density near melting point estimated order cent.