Electrical Characterization and Dielectric relaxation of Au/Porous Silicon Contacts
作者： M. Chavarria , F. Fonthal
DOI: 10.1002/9780470528990.CH13
关键词: Dielectric permittivity 、 Electronic engineering 、 Porous silicon 、 Characterization (materials science) 、 Gate dielectric 、 Dielectric 、 Electrochemical etching 、 Relaxation (physics) 、 Materials science 、 Composite material
摘要:
sci-hub.st 参考文章(15)
M. Ben-Chorin, F. Möller, F. Koch, Nonlinear electrical transport in porous silicon. Physical Review B. ,vol. 49, pp. 2981- 2984 ,(1994) , 10.1103/PHYSREVB.49.2981
F. Fonthal, T. Trifonov, A. Rodriguez, L.F. Marsal, J. Pallarès, AC impedance analysis of Au/porous silicon contacts Microelectronic Engineering. ,vol. 83, pp. 2381- 2385 ,(2006) , 10.1016/J.MEE.2006.10.041
E. Axelrod, A. Givant, J. Shappir, Y. Feldman, A. Sa’ar, Dielectric relaxation and transport in porous silicon Physical Review B. ,vol. 65, pp. 165429- ,(2002) , 10.1103/PHYSREVB.65.165429
J. Salonen, M. Björkqvist, J. Paski, Temperature-dependent electrical conductivity in thermally carbonized porous silicon Sensors and Actuators A-physical. ,vol. 116, pp. 438- 441 ,(2004) , 10.1016/J.SNA.2004.05.005
M. Theodoropoulou, P. K. Karahaliou, C. A. Krontiras, S. N. Georga, N. Xanthopoulos, M. N. Pisanias, C. Tsamis, A. G. Nassiopoulou, Transient and ac electrical transport under forward and reverse bias conditions in aluminum/porous silicon/p-cSi structures Journal of Applied Physics. ,vol. 96, pp. 7637- 7642 ,(2004) , 10.1063/1.1815388
L. A. Balagurov, S. C. Bayliss, A. F. Orlov, E. A. Petrova, B. Unal, D. G. Yarkin, Electrical properties of metal/porous silicon/p-Si structures with thin porous silicon layer Journal of Applied Physics. ,vol. 90, pp. 4184- 4190 ,(2001) , 10.1063/1.1402670
M.Ben Chorin, F. Möller, F. Koch, AC conductivity in porous silicon Journal of Luminescence. ,vol. 57, pp. 159- 162 ,(1993) , 10.1016/0022-2313(93)90125-7
S. Khoshnevis, R.S. Dariani, M.E. Azim-Araghi, Z. Bayindir, K. Robbie, Observation of oxygen gas effect on porous silicon-based sensors Thin Solid Films. ,vol. 515, pp. 2650- 2654 ,(2006) , 10.1016/J.TSF.2006.05.044
L. A. Balagurov, S. C. Bayliss, V. S. Kasatochkin, E. A. Petrova, B. Unal, D. G. Yarkin, Transport of carriers in metal/porous silicon/c-Si device structures based on oxidized porous silicon Journal of Applied Physics. ,vol. 90, pp. 4543- 4548 ,(2001) , 10.1063/1.1407845
L. T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers Applied Physics Letters. ,vol. 57, pp. 1046- 1048 ,(1990) , 10.1063/1.103561