Localized plasma assisted chemical etching through a mask

作者: Jim Nester , David Bollinger

DOI:

关键词: SiliconProjected areaEtching (microfabrication)Flat panel displayMaterials scienceSubstrate (printing)OpticsPlasma etchingDwell timeIsotropic etching

摘要: A system for the formation of circuit patterns on a large flat panel display (78) using plasma assisted chemical etching to achieve uniform or controllably nonuniform etch depth over entire area display. An overlying film (60) is provided substrate (12) with photolithographic mask (62) and having predetermined pattern openings (64) therethrough. The placed adjacent tool which has projected smaller than surface substrate. scanned across transfer into thereof. Thereafter, removed from film. It desirable determine thickness profile data film, then generate dwell time versus position map remove material exposed regions according map. may be glass silicon in either amorphousr polycrystalline states.

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