Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface

摘要: A confinement device for operative arrangement within a substrate etching chamber, having lower surface of the generally arranged over outer top such that gap-spacing therebetween is equidistant. This spacing less than sheath thickness plasma, preferably ⅓ rd an inner width aperture through device. The aperture, sized greater 3 times thickness, in communication with channel which etchant gas can be confined reaction to selectively etch localized area below aperture. system dry IC wafer includes chamber and may plasma induced sustained by RF energy, microwave source, or other as designed. And, method included surface, steps of: arranging leaving therebetween, so said located above (the cover whole on microcircuits are fabricated, some portion surface); providing