Method for etching vias
作者： Russell Westerman , David Johnson
DOI:
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摘要: An improved method for etching a substrate that reduces the formation of pillars is provided by present invention. In accordance with method, residence time an etch gas utilized in process decreased and power inductively coupled plasma source used to dissociate increased. A low bias RF voltage during process. The ramped between different levels confinement ring force reactive species generated over surface substrate. These steps reduce or eliminate
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