作者: Koichi Nagami , Norikazu Yamada , Toshifumi Tachikawa
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摘要: A plasma processing apparatus includes a chamber; conductive base within the an electrostatic chuck, having electrode, provided on base; high frequency power supply that applies to first DC voltage chuck; and generation unit generates of gas chamber. method performed in connecting electrode cutting off connection between generating chamber by applying state chuck is cut off.