Method for controlling potential of susceptor in plasma processing device
作者： Nagami Koichi
DOI:
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摘要: The invention suppresses abnormal discharge through the space between substrate and susceptor. In a method according to one embodiment of invention, pulse-modulated high frequency signal is supplied susceptor from at least first high-frequency power supply second supply. Further, modulated direct current voltage that has been in synchronization with applied application unit. value set so as reduce difference potential mounted on electrostatic chuck
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