Semiconductor device producing method and semiconductor device producing apparatus
作者： Shinji Yashima , Tadashi Terasaki , Unryu Ogawa , Naoya Yamakado
DOI:
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摘要: A producing method of a semiconductor device uses plasma processing apparatus including chamber, substrate supporting body which is to support in the and cylindrical electrode magnetic lines force-forming are disposed around chamber. The comprises supplying gas oxygen element into plasma-discharging by high frequency electric field obtained power oxidize an object form oxide film having thickness 30 60 Å.
lens.org 参考文章(6)
Hayashi Otsuki, Kimihiro Matsuse, Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film ,(2002)
David W. Groechel, Craig A. Roderick, D. Pinson Ii Jay, John R. Trow, Kenneth S. Collins, Peter R. Keswick, Masato M. Toshima, Lawrence Chang-Lai Lei, Jerry Yuen-Kui Wong, Chan-Lon Yang, Jeffrey Marks, Tetsuya Ishikawa, Process used in an RF coupled plasma reactor ,(1993)
Petr Pavlik, Karl-Georg Burri, Process for removing returnable containers from circulation utilizing image processing of brightness values for inspection windows ,(1996)
Ponce Saopraseuth, Derryl D. J. Allman, Nabil Mansour, Capacitor with stoichiometrically adjusted dielectric and method of fabricating same ,(2003)
Shigemi Murakawa, Mitsuhiro Yuasa, Satoru Kawakami, Toshiaki Hongoh, Semiconductor manufacturing method and semiconductor manufacturing apparatus ,(2000)
Yunlong Li, Noriyoshi Sato, Satoru Iizuka, Plasma generation apparatus ,(1998)