Method forming silicon oxynitride gate dielectric layer with uniform nitrogen concentration
作者： Dong-chan Kim , Sang-Bom Kang , Seong-Hoon Jeong , Myoung-Bum Lee , Jin-Hwa Heo
DOI:
关键词: Semiconductor device 、 Plasma 、 Substrate (electronics) 、 High-κ dielectric 、 Nitrogen 、 Composite material 、 Gate dielectric 、 Silicon oxynitride 、 Materials science 、 Analytical chemistry 、 Layer (electronics)
摘要: A method of manufacturing a semiconductor device in process camber is disclosed. The includes forming preliminary dielectric layer including oxynitride on substrate by performing plasma oxidation treatment and first nitridation treatment, wherein the has substantially uniform nitrogen concentration profile to defined depth, from second higher than that layer.
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