作者: Jingjing Liu , He Ren , Subhash Deshmukh
DOI:
关键词: Optoelectronics 、 Plasma etching 、 Etching (microfabrication) 、 Electrical engineering 、 Materials science 、 Electrical conductor 、 Process (computing) 、 DC bias 、 Pedestal 、 Substrate (printing) 、 Electrode
摘要: In one aspect, a plasma etching apparatus is disclosed. The includes chamber body having process adapted to receive substrate, an RF source coupled electrode, pedestal located in the processing and support plurality of conductive pins contact substrate during processing, DC bias electrically pins. Etching methods are provided, as numerous other aspects.