Method for dry etching a semiconductor wafer
作者： Hyo Sang Kang
DOI:
关键词: Plasma 、 Electrode 、 Optoelectronics 、 Reactive-ion etching 、 Materials science 、 Edge (geometry) 、 Dry etching 、 Plasma etching 、 Analytical chemistry 、 Etching (microfabrication) 、 Wafer
摘要: Disclosed a method for dry etching semiconductor wafer by plasma generated between power-supplied first electrode and grounded second electrode. After the bottom surface of edge is in contact with electrode, top side are etched ionized species discharge reactive ion etching. Then, after upper radicalized
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