Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma

摘要: The angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma was studied using three types Faraday cages located transformer coupled etcher. substrates were fixed on sample holder slopes that have different angles to cathode. substrate subjected one processes depending design cage, i.e., sputtered particles from bottom surface (case I), by incident ions II), or simultaneous and III). Both etch measured changing substrate–surface angle self-bias voltage range −100 −800 V. redeposition-only I) at −450 V closely followed quadratic curve whereas cubic curve, indicating mechanisms energy regimes. steep increase rate with angle...