Method for selective removal of a material from a wafer's alignment marks
作者： Gurtej S. Sandhu , Alan E. Laulusa
DOI:
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摘要: The present invention remedies the problems associated with selective etching of material, and in particular tungsten, by locally removing material (e.g. tungsten) from alignment marks through wet without need for any photo steps. Either before or after chemical mechanical polishing, wafers are flatly aligned a tungsten agent is introduced an etchant dispensing apparatus onto marks. Since mark normally few hundred microns size there large unused silicon real estate around marks, constraints vis-a-vis wafer not very critical plugs live dice easily protected etch. After etch, byproduct removed suction cleaned being rinsed distilled water.
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