Method of etching back of tungsten layers on semiconductor wafers, and solution therefore

摘要: Disclosed is a method of etching back tungsten layer on semiconductor wafer by polishing process. The comprises: exposing the to be polished solution at preselected temperature, comprising an oxidizing component which oxidizes oxide; mechanically oxide from and into solution; also dissolution selected group consisting KOH NH 4 OH or mixture thereof, being substantially dissoluted in solution.