Method of etching a tantalum nitride layer in a high density plasma

摘要: A method of plasma etching a patterned tantalum nitride layer, which provides an advantageous etch rate and good profile control. The employs source gas comprising primary etchant to provide reasonable rate, secondary etchant/profile-control additive improve the etched feature profile. is either fluorine-comprising or inorganic chlorine-comprising gas. Where etchant, profile-control bromine-comprising By changing ratio additive, can be controlled. For best results, preferably high density (minimum electron 1011e−/cm3), bias power applied semiconductor substrate increase anisotropy.