Method of ashing layers, and apparatus for ashing layers

摘要: A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on semiconductor wafer, by applying ozone to the are disclosed. An gas containing oxygen atom radical, or ashing-promoting gas, is applied thereby layer readily efficiently. The surface temperature of set at prescribed value, uniformly onto entire part thereof, thus whole high rate, end-point process detected, enhance efficiency process.