Method of etching a SiN/Ir/TaN or SiN/Ir/Ti stack using an aluminum hard mask

摘要: A method of etching includes preparing a substrate; depositing first etch stop layer; forming an iridium bottom electrode SiN and patterning aluminum hard mask; non-patterned layer with selective etchant, stopping at the level second etchant; oxide CMP to remaining wet form trench; ferroelectric material in trench formed by removal high-k oxide; completing device, including metallization.