Ion beam induced luminescence of thin films
作者： R.J. Brooks , D.E. Hole , P.D. Townsend , Z. Wu , J. Gonzalo
DOI: 10.1016/S0168-583X(01)01256-3
关键词: Luminescence 、 Layer (electronics) 、 Borosilicate glass 、 Analytical chemistry 、 Pulsed laser deposition 、 Ion 、 Nanoparticle 、 Thin film 、 Ion beam 、 Materials science
摘要: Abstract Precise control of ion range and ionisation rate makes beam induced luminescence (IBL) a useful analytical technique for studying thin films. Combinations IBL cathodo-luminescence (CL) offer complementary information. In the present studies films alumina produced by pulsed laser deposition (PLD), they reveal influence PLD growth conditions. Strong sensitisation from presence layer copper nanoparticles, changes in nanoparticles following thermal treatments intrinsic defects layers were observed. For multilayer was particularly noting signals deeper layers. Some data also recorded sol–gel grown on silica or borosilicate glass.
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