GaAs: exciton fine-structure
作者： E.C. Fernandes da Silva
DOI: 10.1007/978-3-540-48529-2_104
关键词: Electronic properties 、 Exciton 、 Semiconductor 、 Structure (category theory) 、 Condensed matter physics 、 Gallium arsenide 、 Materials science
摘要:
harvard.edu
springermaterials.com
springer.com 参考文章(2)
Huaxiang Fu, Lin-Wang Wang, Alex Zunger, Excitonic exchange splitting in bulk semiconductors Physical Review B. ,vol. 59, pp. 5568- 5574 ,(1999) , 10.1103/PHYSREVB.59.5568
U. Rössler, H.-R. Trebin, Exchange and polaron corrections for excitons in the degenerate-band case Physical Review B. ,vol. 23, pp. 1961- 1970 ,(1981) , 10.1103/PHYSREVB.23.1961