Excitonic exchange splitting in bulk semiconductors

摘要: We present an approach to calculate the excitonic fine-structure splittings due electron-hole short-range exchange interactions using local-density approximation pseudopotential method, and apply it bulk semiconductors CdSe, InP, GaAs, InAs. Comparing with previous theoretical results, current calculated agree well experiments. Furthermore, we provide approximate relationship between splitting exciton Bohr radius, which can be used estimate for other materials. The calculation indicates that a commonly formula in quantum dot is not valid. Finally, find very large pressure dependence of splitting: factor 4.5 increase as lattice constant changes by 3.5%. This mainly decrease radius via change electron effective mass.