Model of photoluminescence of InAs quantum dots embedded in indirect band gap AlGaAs matrices
作者： T.S. Shamirzaev , A.M. Gilinsky , A.I. Toropov , A.K. Bakarov , D.A. Tenne
DOI: 10.1109/KORUS.2004.1555708
关键词:
摘要: Photoluminescence kinetics in InAs quantum dots embedded indirect-gap AlGaAs matrices has been studied. It found that the duration of photoluminescence decay at low temperatures greatly decreases from milliseconds down to nanoseconds with decreasing AlAs fraction matrix. The experimental results are interpreted framework a model takes into account an exchange splitting excitonic levels dots.
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