Self-trapped exciton recombination in silicon nanocrystals
作者： A. Yu. Kobitski , K. S. Zhuravlev , H. P. Wagner , D. R. T. Zahn
DOI: 10.1103/PHYSREVB.63.115423
关键词:
摘要: In this paper we investigate the time-resolved and stationary photoluminescence (PL) of silicon nanocrystals fabricated in a oxide matrix. The PL intensity reveals nonexponential decay for all temperatures which can be fitted by ``stretch''-exponential function. From 60 down to 5 K an increase time is observed going along with decrease intensity. addition spectra show shape change during decay. experimental data are interpreted model self-trapped excitons (STE) localized Si-Si dimer. A numerical simulation provides radiative nonradiative recombination times STE transition, energy singlet-triplet splitting height barrier.
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