Wire bond metallurgy for high temperature electronics

作者: J.T. Benoit , S. Chin , R.R. Grzybowski , Shun-Tien Lin , R. Jain

DOI: 10.1109/HITEC.1998.676770

关键词: Reliability (semiconductor)IntermetallicElectronic packagingMaterials scienceDie (manufacturing)Substrate (electronics)Wire bondingAluminiumNickelMetallurgy

摘要: Harsh environment electronic packaging is needed to assure the reliability of distributed controls for operation at 200/spl deg/C ambient temperatures. The wire bond interconnects are a critical contributor overall reliability. present study will investigate use aluminum wires on nickel metallized substrates. This metallurgy maintains monometallic couple die metallization interface while utilizing established substrate technology provide stable connection substrate. Thermal aging Al-1%Si substrates was conducted. Both bulk alumina and plate silver thick film were evaluated. Intermetallic formation rates be determined both Al/Ni Al/Ni/Ag couple. In addition, fatigue tests conducted bonded various metallizations. effects intermetallic also assessed.

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