Evaluation of gold and aluminum wire bond performance for high temperature (500 /spl deg/C) silicon carbide (SiC) power modules
作者： H.A. Mustain , A.B. Lostetter , W.D. Brown
DOI: 10.1109/ECTC.2005.1442008
关键词:
摘要: This paper describes an investigation of aluminum and gold wire bonding processes for high temperature electronics. Ultrasonic 8 15 mil 3 on various metallized substrates was investigated. Aluminum bonds to nickel-plated nitride (AlN) silicon (SiN) were thermally cycled between -55 /spl deg/C 400 deg/C, wires bonded gold-coated AlN SiN 500 deg/C. The thermal cycling accomplished according MIL-STD-883E criteria. An environmental scanning electron microscope (ESEM) used examine the wire/pad pad/substrate interface areas before after cycling. After cycling, samples subjected destructive pull testing at room temperature. results revealed no significant degradation
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