Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
作者： M.-J. Lee , Y. Park , D.-S. Suh , E.-H. Lee , S. Seo
关键词: Resistor 、 Series (mathematics) 、 High density 、 Materials science 、 Nanotechnology 、 Optoelectronics 、 Non-volatile memory 、 Oxide
摘要: … Two monitoring pulses of triangular shape and one programming pulse located between monitoring pulses are applied to test memory cell (device under test, DUT) using Agilent …
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