摘要: One of the tasks International Technology Roadmap for Semiconductors (ITRS) Emerging Research Devices (ERD) Working Group (TWG) is to seek out memory technologies presented in research literature and weigh whether they have potential serve 22-nm smaller IC generations. The motive this effort develop data that can help guide investment decisions. In 2004, ERD TWG summarized some quantitative attributes four alternative approaches, developed a potential/risk score each. While falls far short identifying specific technology, it at least beginning. This article describes nature challenge reports initial study results.
sci-hub.se 参考文章(26)
Nobuhide Yoneya, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Charge transfer control by gate voltage in crossed nanotube junction Applied Physics Letters. ,vol. 81, pp. 2250- 2252 ,(2002) , 10.1063/1.1508160
C. Rossel, D. Widmer, G. I. Meijer, D. Brémaud, Electrical current distribution across a metal–insulator–metal structure during bistable switching Journal of Applied Physics. ,vol. 90, pp. 2892- 2898 ,(2001) , 10.1063/1.1389522
Xiangfeng Duan, Yu Huang, Charles M. Lieber, Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires Nano Letters. ,vol. 2, pp. 487- 490 ,(2002) , 10.1021/NL025532N
Sandip Tiwari, Farhan Rana, Hussein Hanafi, Allan Hartstein, Emmanuel F. Crabbé, Kevin Chan, A silicon nanocrystals based memory Applied Physics Letters. ,vol. 68, pp. 1377- 1379 ,(1996) , 10.1063/1.116085
K. V. Thadani, M. Radosavljevic, M. Freitag, A. T. Johnson, Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors arXiv: Mesoscale and Nanoscale Physics. ,(2002) , 10.1021/NL025584C
Won Bong Choi, Soodoo Chae, Eunju Bae, Jo-Won Lee, Byoung-Ho Cheong, Jae-Ryoung Kim, Ju-Jin Kim, None, Carbon-nanotube-based nonvolatile memory with oxide–nitride–oxide film and nanoscale channel Applied Physics Letters. ,vol. 82, pp. 275- 277 ,(2003) , 10.1063/1.1536713
Konstantin K. Likharev, Layered tunnel barriers for nonvolatile memory devices Applied Physics Letters. ,vol. 73, pp. 2137- 2139 ,(1998) , 10.1063/1.122402
X. Tang, X. Baie, J.P. Colinge, A. Crahay, B. Katschmarsyj, V. Scheuren, D. Spôte, N. Reckinger, F. Van de Wiele, V. Bayot, Self-aligned silicon-on-insulator nano flash memory device Solid-state Electronics. ,vol. 44, pp. 2259- 2264 ,(2000) , 10.1016/S0038-1101(00)00221-5
Y. Watanabe, J. G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck, S. J. Wind, Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals Applied Physics Letters. ,vol. 78, pp. 3738- 3740 ,(2001) , 10.1063/1.1377617
Xuema Li, Duncan R. Stewart, R. Stanley Williams, Jan O. Jeppesen, Kent A. Nielsen, J. Fraser Stoddart, Deirdre L. Olynick, Erik Anderson, Yong Chen, Douglas A. A. Ohlberg, Nanoscale molecular-switch devices fabricated by imprint lithography Applied Physics Letters. ,vol. 82, pp. 1610- 1612 ,(2003) , 10.1063/1.1559439