Hydrodynamic description of CVD processes

摘要: Abstract A CVD process with a two-component gas mixture A-B where only the component B is deposited solved numerically for an axisymmetric stagnation flow geometry assuming mass function of on deposition surface to have fixed value YBd. comparison calculated lines visualization experiments shows satisfactory agreement. The agreement between calculations and SiO2 Si3N4 (SiH4 + O2 → SiO2, SiH4 NH3 Si3N4) was good some ranges. In these ranges profiles could be one fitting parameter (YBd).