Design of MOS-based all-pass filter using thermal noise models

作者: M. Archanaa , Karthigha Balamurugan , M. Jayakumar

DOI: 10.1109/EMBEDDEDSYS.2014.6953047

关键词: Shot noiseNoise generatorNoise figureControl theoryFlicker noiseElectronic engineeringY-factorEffective input noise temperatureNoise (electronics)EngineeringNoise temperature

摘要: Scaling of MOSFET increases the device performance in terms speed, current drive, operating frequency and many other parameters; but on end, noise aggravates due to shrinking dimensions. Although several sources are present recent submicron device, equivalent thermal is considered as a prominent one. This paper deals with analysis computation various available models also focuses design implementation MOS-based all-pass filter using appropriate model. Thus drawbacks currently which do not include model, have been considerably overcome. Simulation results MOS based all pass without inclusion model discussed hence accuracy improved.

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