High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues
作者： M.J. Deen , C.-H. Chen , S. Asgaran , G.A. Rezvani , J. Tao
关键词:
摘要: Compact modeling of the most important high-frequency (HF) noise sources MOSFET is presented in this paper, along with challenges measurement and deembedding future CMOS technologies. Several channel thermal models are reviewed their ability to predict extremely small devices discussed. The impact technology scaling on performance MOSFETs also investigated by means analytical expressions. It shown that gate tunneling current has a significant parameters, especially at lower frequencies. Limitations some commonly used predicting HF parameters modern addressed methods alleviate limitations discussed
harvard.edu
sci-hub.se 参考文章(51)
Aldert Van der Ziel, Noise in solid state devices and circuits ,(1986)
Bernhard Schmithusen, Fabian M. Bufler, Thomas Feudel, Andreas Schenk, Axel Erlebach, Wolfgang Fichtner, Andreas Wettstein, Simon Brugger, Simulation of RF Noise in MOSFETs Using Different Transport Models IEICE Transactions on Electronics. ,vol. 86, pp. 481- 489 ,(2003)
Yannis Tsividis, Operation and modeling of the MOS transistor ,(1987)
Guillermo Gonzalez, Microwave Transistor Amplifiers: Analysis and Design ,(1984)
B.J. Sheu, D.L. Scharfetter, P.-K. Ko, M.-C. Jeng, BSIM: Berkeley short-channel IGFET model for MOS transistors IEEE Journal of Solid-State Circuits. ,vol. 22, pp. 558- 566 ,(1987) , 10.1109/JSSC.1987.1052773
M. Valenza, A. Hoffmann, D. Sodini, A. Laigle, F. Martinez, D. Rigaud, Overview of the impact of downscaling technology on 1/f noise in p-MOSFETs to 90 nm IEE Proceedings - Circuits, Devices and Systems. ,vol. 151, pp. 102- 110 ,(2004) , 10.1049/IP-CDS:20040459
Juan C. Ranuárez, M.J. Deen, Chih-Hung Chen, A review of gate tunneling current in MOS devices Microelectronics Reliability. ,vol. 46, pp. 1939- 1956 ,(2006) , 10.1016/J.MICROREL.2005.12.006
D.P. Triantis, A.N. Birbas, S.E. Plevridis, Induced gate noise in MOSFETs revisited: The submicron case Solid-state Electronics. ,vol. 41, pp. 1937- 1942 ,(1997) , 10.1016/S0038-1101(97)00178-0
M. J. Deen, J. Ilowski, Modelling of bonding pads and their effect on the high-frequency-noise figure of polysilicon emitter bipolar junction transistors Canadian Journal of Physics. ,vol. 74, pp. 200- 204 ,(1996) , 10.1139/P96-859
Ming-Hsiang Cho, Guo-Wei Huang, Lin-Kun Wu, Chia-Sung Chiu, Yueh-Hua Wang, Kun-Ming Chen, Hua-Chou Tseng, Tsun-Lai Hsu, Comments on "A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs" IEEE Transactions on Microwave Theory and Techniques. ,vol. 54, pp. 2926- 2934 ,(2005) , 10.1109/TMTT.2005.854245