Comments on "A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs"
作者： Ming-Hsiang Cho , Guo-Wei Huang , Lin-Kun Wu , Chia-Sung Chiu , Yueh-Hua Wang
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摘要: A general three-port S-parameter de-embedding method using shield-based test structures for microwave on-wafer characterization is presented in this paper. This does not require any physical equivalent-circuit assumption the surrounding parasitics of a device-under-test. We use one open and three thru dummy devices to remove parasitic components connected gate, drain, source terminals MOSFET. By shielding lossy silicon substrate, cross-coupling from port can be significantly mitigated, thus, probe pads interconnects at each separately subtracted. The MOS transistor its corresponding fabricated 0.18-/spl mu/m CMOS process were characterized up 20 GHz. Compared with two-port cascade-based method, proposed procedure further eliminate associated dangling leg terminal. impacts accuracy technique on device modeling simulation are also discussed.
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harvard.edu参考文章(17)
T. L. Hsu, G. W. Huang, A. S. Peng, S. C. Wang, Ta Hsueh, H. C. Tseng, K. M. Chen, A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small- Signal Model TechConnect Briefs. ,vol. 2, pp. 151- 154 ,(2004)
Guillermo Gonzalez, Microwave Transistor Amplifiers: Analysis and Design ,(1984)
Michael Bohl Jenner, T. E. Kolding, Test Structures and Techniques for On-Wafer CMOS TRL Calibration Test Structures and Techniques for On-Wafer CMOS TRL Calibration. pp. 137- 140 ,(2001)
M.C.A.M. Koolen, J.A.M. Geelen, M.P.J.G. Versleijen, An improved de-embedding technique for on-wafer high-frequency characterization bipolar circuits and technology meeting. pp. 188- 191 ,(1991) , 10.1109/BIPOL.1991.160985
T.E. Kolding, A four-step method for de-embedding gigahertz on-wafer CMOS measurements IEEE Transactions on Electron Devices. ,vol. 47, pp. 734- 740 ,(2000) , 10.1109/16.830987
W. Steiner, M. Pfost, H.-M. Rein, A. Sturmer, A. Schuppen, Methods for measurement and simulation of weak substrate coupling in high-speed bipolar ICs IEEE Transactions on Microwave Theory and Techniques. ,vol. 50, pp. 1705- 1713 ,(2002) , 10.1109/TMTT.2002.800392
Chih-Hung Chen, M.J. Deen, A general procedure for high-frequency noise parameter de-embedding of MOSFETs by taking the capacitive effects of metal interconnections into account international conference on microelectronic test structures. pp. 109- 114 ,(2001) , 10.1109/ICMTS.2001.928647
H. Cho, D.E. Burk, A three-step method for the de-embedding of high-frequency S-parameter measurements IEEE Transactions on Electron Devices. ,vol. 38, pp. 1371- 1375 ,(1991) , 10.1109/16.81628
T.E. Kolding, C.R. Iversen, Simple noise deembedding technique for on-wafer shield-based test fixtures IEEE Transactions on Microwave Theory and Techniques. ,vol. 51, pp. 11- 15 ,(2003) , 10.1109/TMTT.2002.806938
Seonghearn Lee, B.R. Ryum, Sang Won Kang, A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistors IEEE Transactions on Electron Devices. ,vol. 41, pp. 233- 238 ,(1994) , 10.1109/16.277373