A four-step method for de-embedding gigahertz on-wafer CMOS measurements
作者： T.E. Kolding
DOI: 10.1109/16.830987
关键词:
摘要: In this paper, a de-embedding method is proposed for conducting accurate on-wafer device measurements in the gigahertz range. The addresses issues of substrate coupling and contact effects therefore suitable with lossy technologies such as CMOS. assumes probe-tip two-port calibration performed well-known techniques impedance substrates. By employing physical interpretation test-fixture, alleviates number known problems common procedures. Four distinct mathematical steps are suggested to de-embed parasitics test-fixture give an measurement under test. introducing simple compensation factor in-fixture standard imperfections, allows large devices be measured high accuracy. applicability demonstrated up 12 GHz.
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