On-wafer calibration techniques for giga-hertz CMOS measurements
作者： T.E. Kolding
DOI: 10.1109/ICMTS.1999.766225
关键词:
摘要: This paper presents five different methods for performing on-wafer calibration of RF CMOS measurements. All are compatible with standard technology. A comparison method performance up to 12 GHz is made measurements on devices. The results verify that substrate and metallization losses must be considered obtain high accuracy. Fixture design issues discussed a mitigating overestimation DUT suggested.
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