22.7-dB Gain $-$ 19.7-dBm $ICP_{1{\rm dB}}$ UWB CMOS LNA
作者： D. Pepe , D. Zito
DOI: 10.1109/TCSII.2009.2027943
关键词:
摘要: A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm technology and consists of common-gate stage two subsequent common-source stages. input realizes wideband impedance matching to the source receiver (i.e., antenna), whereas stages provide gain by exploiting RLC tanks. measurements have exhibited transducer 22.7 dB at 5.2 GHz, 4.9-GHz-wide B 3dB, an reflection coefficient lower than -10.5 dB, input-referred 1-dB compression point -19.7 dBm, which are excellent agreement with postlayout simulation results, confirming approach validity design robustness.
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