Technology independent degradation of minimum noise figure due to pad parasitics
作者： C.E. Bilber , M.L. Schmatz , T. Morf , U. Lott , E. Morifuji
DOI: 10.1109/MWSYM.1998.689343
关键词:
摘要: In order to investigate the influence of pad parasitics on device noise performance, parameters Si CMOS, GaAs MESFET and p-HEMT transistors were determined. Measurements devices with various gate widths demonstrate that parasitic losses pads substantially performance independent FET technology. To accurately separate contribution device, a parameter de-embedding procedure has been developed. It is shown for an improvement minimum figure NF/sub min/ non ideal substrates, must be minimized. Especially small input amplifiers, considered during modeling design. A mathematical using correlation matrices allows embedding parameters.
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