Three‐port cascade de‐embedding methodology with the dangling leg effect considered for pHEMT electron trapping characterization at microwave frequency
作者： Chie-In Lee , Wei-Cheng Lin , Yan-Ting Lin
DOI: 10.1002/MOP.28081
关键词:
摘要: A three-port cascade de-embedding procedure utilized to accurately eliminate the source dangling leg effect of a pseudomorphic High Electron Mobility Transistor (pHEMT) test structure without shielding is presented. The measured device under (DUT) de-embedded by using experimental and electromagnetic (EM) simulated data dummy structures their difference below 1%. In addition, extracted equivalent circuit parameters pHEMT exhibit frequency-independent characteristics, indicating parasitic removed accurately. These demonstrate that presented method valid so results can reflect physical electron trapping at microwave frequency. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:77–83,
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