Synthesis of thin silicon dioxide layers with high E' center densities and investigation of the E' center spin relaxation dynamics for single spin readout applications

摘要: Methods for the creation of thin amorphous silicon dioxide (aSiO2) layers on crystalline substrates with very high densities dangling bonds (so called E' centers) have been explored and volume [E']> 5x10^18 cm-3 throughout a 60nm thick film demonstrated by exposure thermal oxide layer to low pressure Argon radio frequency plasma. While generated center can be annealed completely at 300C, they are comparatively stable room temperature half life about one month. Spin relaxation time measurements these states between T = 5K 70K show that phase T2 does not strongly depend compared SiO2 films lower density, is significantly shortened. The longitudinal T1 ~195(5)us in agreement low-density SiO2. In contrast, ~625(51)us much shorter than density. These results discussed context centers being used as probe spins spin-selection rules based single spin-readout.