Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires
作者： Maogong Jiang , Guicui Fu , Lorenzo Ceccarelli , He Du , Martin Bendix Fogsgaard
DOI: 10.1109/ECCE.2019.8912236
关键词: Finite element method 、 Power cycling 、 Fracture mechanics 、 Thermal 、 Silicon 、 Material properties 、 Multiphysics 、 Insulated-gate bipolar transistor 、 Materials science 、 Mechanical engineering
摘要: This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties considered in silicon chips aluminum Steady-state electro-thermo-mechanical simulation results modules given collector current presented. The degradation mechanisms wire-bonding crack propagation complete lift-off explored. Simulations validated through power cycling tests. trend measured forward voltage V CE(on) is similar result. modeling can be used evaluate health status module
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