作者: Bing Ji , Xueguan Song , Wenping Cao , Volker Pickert , Yihua Hu
DOI: 10.1109/TPEL.2014.2318991
关键词:
摘要: This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the …